plasma-etch-controller
Plasma etching skill for anisotropic nanostructure patterning with selectivity and profile control
Best use case
plasma-etch-controller is best used when you need a repeatable AI agent workflow instead of a one-off prompt.
Plasma etching skill for anisotropic nanostructure patterning with selectivity and profile control
Teams using plasma-etch-controller should expect a more consistent output, faster repeated execution, less prompt rewriting.
When to use this skill
- You want a reusable workflow that can be run more than once with consistent structure.
When not to use this skill
- You only need a quick one-off answer and do not need a reusable workflow.
- You cannot install or maintain the underlying files, dependencies, or repository context.
Installation
Claude Code / Cursor / Codex
Manual Installation
- Download SKILL.md from GitHub
- Place it in
.claude/skills/plasma-etch-controller/SKILL.mdinside your project - Restart your AI agent — it will auto-discover the skill
How plasma-etch-controller Compares
| Feature / Agent | plasma-etch-controller | Standard Approach |
|---|---|---|
| Platform Support | Not specified | Limited / Varies |
| Context Awareness | High | Baseline |
| Installation Complexity | Unknown | N/A |
Frequently Asked Questions
What does this skill do?
Plasma etching skill for anisotropic nanostructure patterning with selectivity and profile control
Where can I find the source code?
You can find the source code on GitHub using the link provided at the top of the page.
SKILL.md Source
# Plasma Etch Controller
## Purpose
The Plasma Etch Controller skill provides comprehensive plasma etching process control for nanofabrication, enabling anisotropic pattern transfer with optimized selectivity, profile control, and minimal damage.
## Capabilities
- Etch chemistry selection
- Anisotropy and selectivity optimization
- Endpoint detection
- Profile and sidewall angle control
- Loading effect compensation
- Plasma damage assessment
## Usage Guidelines
### Plasma Etch Process
1. **Chemistry Selection**
- Match chemistry to material
- Consider selectivity requirements
- Address sidewall passivation
2. **Profile Control**
- Optimize ion energy
- Balance chemical and physical
- Control sidewall angle
3. **Endpoint Detection**
- Use OES for species monitoring
- Apply interferometry
- Implement time-based backup
## Process Integration
- Nanolithography Process Development
- Nanodevice Integration Process Flow
## Input Schema
```json
{
"material": "string",
"mask_type": "string",
"target_depth": "number (nm)",
"feature_cd": "number (nm)",
"selectivity_requirements": {
"to_mask": "number",
"to_underlayer": "number"
}
}
```
## Output Schema
```json
{
"etch_recipe": {
"gases": [{"gas": "string", "flow": "number (sccm)"}],
"pressure": "number (mTorr)",
"rf_power": "number (W)",
"bias_power": "number (W)"
},
"etch_rate": "number (nm/min)",
"selectivity": {
"to_mask": "number",
"to_underlayer": "number"
},
"sidewall_angle": "number (degrees)",
"uniformity": "number (%)"
}
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