plasma-etch-controller

Plasma etching skill for anisotropic nanostructure patterning with selectivity and profile control

509 stars

Best use case

plasma-etch-controller is best used when you need a repeatable AI agent workflow instead of a one-off prompt.

Plasma etching skill for anisotropic nanostructure patterning with selectivity and profile control

Teams using plasma-etch-controller should expect a more consistent output, faster repeated execution, less prompt rewriting.

When to use this skill

  • You want a reusable workflow that can be run more than once with consistent structure.

When not to use this skill

  • You only need a quick one-off answer and do not need a reusable workflow.
  • You cannot install or maintain the underlying files, dependencies, or repository context.

Installation

Claude Code / Cursor / Codex

$curl -o ~/.claude/skills/plasma-etch-controller/SKILL.md --create-dirs "https://raw.githubusercontent.com/a5c-ai/babysitter/main/library/specializations/domains/science/nanotechnology/skills/plasma-etch-controller/SKILL.md"

Manual Installation

  1. Download SKILL.md from GitHub
  2. Place it in .claude/skills/plasma-etch-controller/SKILL.md inside your project
  3. Restart your AI agent — it will auto-discover the skill

How plasma-etch-controller Compares

Feature / Agentplasma-etch-controllerStandard Approach
Platform SupportNot specifiedLimited / Varies
Context Awareness High Baseline
Installation ComplexityUnknownN/A

Frequently Asked Questions

What does this skill do?

Plasma etching skill for anisotropic nanostructure patterning with selectivity and profile control

Where can I find the source code?

You can find the source code on GitHub using the link provided at the top of the page.

SKILL.md Source

# Plasma Etch Controller

## Purpose

The Plasma Etch Controller skill provides comprehensive plasma etching process control for nanofabrication, enabling anisotropic pattern transfer with optimized selectivity, profile control, and minimal damage.

## Capabilities

- Etch chemistry selection
- Anisotropy and selectivity optimization
- Endpoint detection
- Profile and sidewall angle control
- Loading effect compensation
- Plasma damage assessment

## Usage Guidelines

### Plasma Etch Process

1. **Chemistry Selection**
   - Match chemistry to material
   - Consider selectivity requirements
   - Address sidewall passivation

2. **Profile Control**
   - Optimize ion energy
   - Balance chemical and physical
   - Control sidewall angle

3. **Endpoint Detection**
   - Use OES for species monitoring
   - Apply interferometry
   - Implement time-based backup

## Process Integration

- Nanolithography Process Development
- Nanodevice Integration Process Flow

## Input Schema

```json
{
  "material": "string",
  "mask_type": "string",
  "target_depth": "number (nm)",
  "feature_cd": "number (nm)",
  "selectivity_requirements": {
    "to_mask": "number",
    "to_underlayer": "number"
  }
}
```

## Output Schema

```json
{
  "etch_recipe": {
    "gases": [{"gas": "string", "flow": "number (sccm)"}],
    "pressure": "number (mTorr)",
    "rf_power": "number (W)",
    "bias_power": "number (W)"
  },
  "etch_rate": "number (nm/min)",
  "selectivity": {
    "to_mask": "number",
    "to_underlayer": "number"
  },
  "sidewall_angle": "number (degrees)",
  "uniformity": "number (%)"
}
```

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